 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SMBTA06/ MMBTA06 NPN Silicon AF Transistor High breakdown voltage Low collector-emitter saturation voltage Complementary type: SMBTA56 (PNP) MMBTA56 (PNP) 3 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 2 1 VPS05161 Type SMBTA06/ MMBTA06 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Marking s1G 1=B Pin Configuration 2=E 3=C Package SOT23 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg Value 80 80 4 500 1 100 200 330 150 -65 ... 150 Unit V mA A mA mW C Total power dissipation, TS = 79 C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 215 K/W Feb-20-2002 SMBTA06/ MMBTA06 Electrical Characteristics Parameter DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 80 V, IE = 0 Collector cutoff current VCB = 80 V, IE = 0 , TA = 150 C Collector cutoff current VCE = 60 V, IB = 0 DC current gain 1) IC = 10 mA, VCE = 1 V IC = 100 mA, VCE = 1 V Collector-emitter saturation voltage1) IC = 100 mA, IB = 10 mA Base-emitter voltage 1) IC = 100 mA, VCE = 1 V VCEsat VBE(ON) hFE 100 100 0.25 1.2 V ICEO 100 nA ICBO 20 A ICBO 100 nA V(BR)EBO 4 V(BR)CBO 80 V(BR)CEO 80 V Symbol min. Values typ. max. Unit AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 12 pF fT 100 MHz 1) Pulse test: t 300s, D = 2% 2 Feb-20-2002 SMBTA06/ MMBTA06 Total power dissipation Ptot = f(TS) Collector current IC = f (VBE) VCE = 1V 360 mW 300 270 10 3 mA EHP00815 C 10 2 5 100 C 25 C -50 C P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 10 0 5 C 150 TS 10 -1 0 0.5 1.0 V BE V 1.5 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC tp D= T tp EHP00816 Transition frequency fT = f (IC) VCE = 5V 10 3 MHz fT T EHP00817 5 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 10 3 C 3 Feb-20-2002 SMBTA06/ MMBTA06 Base-emitter saturation voltage IC = f (VBEsat ), hFE = 10 10 3 mA EHP00818 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 10 EHP00819 10 3 C 10 2 5 100 C 25 C -50 C C mA 100 C 25 C -50 C 10 2 5 10 1 5 10 1 10 0 5 5 10 -1 0 0.5 1.0 V 1.5 10 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 V V CEsat 0.8 V BEsat Collector cutoff current ICBO = f (TA ) VCB = 80V 10 4 nA EHP00820 DC current gain hFE = f (I C) VCE = 1V EHP00821 10 3 h FE 100 C 10 2 25 C CBO 10 3 5 10 5 2 max -50 C 10 1 5 10 0 5 10 -1 0 50 100 typ 10 1 C 150 TA 10 0 -1 10 10 0 10 1 10 2 mA 10 3 C 4 Feb-20-2002 |
Price & Availability of MMBTA06
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |